Atomistic simulation of primary radiation damage profiles in fluorine-doped tin oxide thin film target using SRIM code
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Date
2024-11-12
Journal Title
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Publisher
University of South Africa (Unisa)
Abstract
In this study, we investigated the discrepancy between the numbers of atomic displacements obtained from the Vac.txt method and those obtained from the Vac.dam method using SRIM-2013 operated in full cascade mode. The SRIM simulations also calculated energy partitioning, damage dose and distribution profiles of the implanted He, C and O ions at three different ion energies of 10 keV, 100 keV and 1 MeV. In all the simulations and at each ion energy value, the target thickness was increased until the entire ion beam was absorbed within the target. The simulated fluorine-doped tin oxide (FTO) thin film target stoichiometrically comprised 78.6% Sn, 16.4% O and 5.0% F, and a 6.013 g/cm3 bulk density. To achieve relatively good statistics with compromised computational time, each run followed 10 000 ion histories. The results indicated that, with increasing ion energies, the peaks of vacancy concentrations moved deeper into the material. For He ions, the vacancy profiles have peaks at ∼0.04, ~0.45 and ~2.9 µm at 10 keV, 100 keV and 1 MeV, respectively. Meanwhile, for C and O ions, the peaks were at ∼0.012, ~0.15 and ~1.23 µm for C ions and ∼0.01, 0.12 and 1.2 µm for O ions at 10 keV, 100 keV and 1 MeV, respectively. We also observed that for all the ions and at all ion energies considered, the Vac.txt method predicted more vacancies than the Vac.dam method, and the discrepancies generally increased with increasing Z by an average value of ∼1.21, ∼1.45 and 1.48 for He, C and O ions respectively. In addition, the electronic and nuclear partitioning profiles revealed that most of the energies of the ions were lost in collision with atomic electrons due to ionisation and excitations, and little to nuclear events. The simulations also revealed that nuclear stopping powers increase at low ion energies. This study also indicated that damage dose profiles strongly depend on the type of incident particle and its energy. A comparison of SRIM and iradina calculated vacancies and incident ion distribution profiles generally indicated perfect agreements between the two codes. FTO thin film remains a promising material for thermal control applications in future spacecraft. However, further analyses are still necessary to comprehensively understand its evolution under intense radiation environments comprising various ions and at different energies.
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Keywords
Fluorine-doped tin oxide, SRIM code, Iradina code, Displacement per atom, Energy partitioning, Binary collision approximation
Citation
Oryema, B., Madiba, I. G., & Mtshali, C. B. (2024). Atomistic Simulation of Primary Radiation Damage Profiles in Fluorine-Doped Tin Oxide Thin Film Target Using SRIM Code. Nano-Horizons: Journal of Nanosciences and Nanotechnologies, 3, 23 pages. https://doi.org/10.25159/3005-2602/15610