Device architecture for visible and near-infrared photodetectors based on two-dimensional SnSe2 and MoS2: a review

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dc.contributor.authorMukhokosi, Emma P.
dc.contributor.authorManohar, Gollakota V.S.
dc.contributor.authorNagao, Tadaaki
dc.contributor.authorKrupanidhi, Saluru B.
dc.contributor.authorNanda, Karuna K.
dc.date.accessioned2020-11-19T10:44:01Z
dc.date.available2020-11-19T10:44:01Z
dc.date.issued2020-07-31
dc.description.abstractWhile band gap and absorption coefficients are intrinsic properties of a material and determine its spectral range, response time is mainly controlled by the architecture of the device and electron/hole mobility. Further, 2D-layered materials such as transition metal dichalogenides (TMDCs) possess inherent and intriguing properties such as a layer-dependent band gap and are envisaged as alternative materials to replace conventional silicon (Si) and indium gallium arsenide (InGaAs) infrared photodetectors. The most researched 2D material is graphene with a response time between 50 and 100 ps and a responsivity of <10 mA/W across all wavelengths. Conventional Si photodiodes have a response time of about 50 ps with maximum responsivity of about 500 mA/W at 880 nm. Although the responsivity of TMDCs can reach beyond 104 A/W, response times fall short by 3–6 orders of magnitude compared to graphene, commercial Si, and InGaAs photodiodes. Slow response times limit their application in devices requiring high frequency. Here, we highlight some of the recent developments made with visible and near-infrared photodetectors based on two dimensional SnSe2 and MoS2 materials and their performance with the main emphasis on the role played by the mobility of the constituency semiconductors to response/recovery times associated with the hetero-structures.en_US
dc.identifier.citationMukhokosi, E. P., Manohar, G. V. S., Nagao, T., Krupanidhi, S. B., & Nanda, K. K. (2020). Device architecture for visible and near-infrared photodetectors based on two-dimensional SnSe2 and MoS2: a review. Micromachines, 11(8), 1–30. https://doi.org/10.3390/MI11080750en_US
dc.identifier.issn2072-666X
dc.identifier.urihttps://dir.muni.ac.ug/handle/20.500.12260/373
dc.language.isoenen_US
dc.publisherMicromachinesen_US
dc.relation.ispartofseriesVol.11;No.8
dc.subjectDevice architectureen_US
dc.subjectPhotodetectorsen_US
dc.subjectResponse speeden_US
dc.subjectMobilityen_US
dc.subjectSnSe2en_US
dc.subjectMoS2en_US
dc.subjectHeterostructuresen_US
dc.subjectGrapheneen_US
dc.titleDevice architecture for visible and near-infrared photodetectors based on two-dimensional SnSe2 and MoS2: a reviewen_US
dc.typeArticleen_US

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